Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates
نویسندگان
چکیده
منابع مشابه
Time-Resolved Photoluminescence Study of Si/ -FeSi2/Si Structures Grown by Molecular Beam Epitaxy
Grown by Molecular Beam Epitaxy Takashi SUEMASU, Motoki TAKAUJI, Cheng LI, Yoshinori OZAWA, Masao ICHIDA and Fumio HASEGAWA Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan Center for Tsukuba Advanced Research Alliance, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan Department of Physics, Konan University, Kobe, Hyo...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2020
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5139636